dated : 14/ 01/2008 semtech electronics ltd. ( subsidiary of sino-tech internatio nal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) ? MMDT5P333 pnp silicon epitaxial planar transistor for switching and interface circuit and drive circuit applications features ? with built-in bias resistors ? simplify circuit design ? reduce a quantity of parts and manufacturing process absolute maximum ratings (t a = 25 o c) parameter symbol value unit collector base voltage -v cbo 50 v collector emitter voltage -v ceo 50 v emitter base voltage v ebo - 20, 6 v collector current -i c 500 ma power dissipation p tot 200 mw junction temperature t j 150 o c storage temperature range t s - 55 to + 150 o c characteristics at t a = 25 o c parameter symbol min. typ. max. unit dc current gain at -v ce = 5 v, -i c = 50 ma h fe 56 - - - collector base cutoff current at -v cb = 50 v -i cbo - - 0.1 a base emitter current at -v be = 5 v -i be - - 2.4 ma collector emitter saturation voltage at -i c = 50 ma, -i b = 2.5 ma -v ce(sat) - - 0.3 v input on voltage at -v ce = 0.3 v, -i c = 20 ma -v i(on) - - 2 v input off voltage at -v ce = 5 v, -i c = 100 a -v i(off) 0.3 - - v input resistor r 1 2.31 3.3 4.29 k ? input resistor r 2 7.5 10 12.5 k ? resistance ratio r 2 / r 1 2.4 3 3.7 - transition frequency at v ce = 10 v, -i e = 5 ma, f = 100 mhz f t - 200 - mhz sot-23 plastic package base (input) emitter (common) r2 r1 collector (output)
|
